PartNumber | STP6N62K3 | STP6N60M2 | STP6N65M2 |
Description | MOSFET N-channel 620V 1.1 | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 | MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in TO-220 package |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 620 V | 600 V | 650 V |
Id Continuous Drain Current | 5.5 A | 4.5 A | 4 A |
Rds On Drain Source Resistance | 1.28 Ohms | 1.06 Ohms | 1.35 Ohms |
Vgs Gate Source Voltage | 30 V | 25 V | 25 V |
Qg Gate Charge | 34 nC | 8 nC | 9.8 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 90 W | 60 W | 60 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | - |
Tradename | SuperMESH | MDmesh | MDmesh |
Packaging | Tube | Tube | Tube |
Height | 9.15 mm | - | - |
Length | 10.4 mm | - | - |
Series | STP6N62K3 | STP6N60M2 | STP6N65M2 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.6 mm | - | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 19 ns | 22.5 ns | 20 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 12.5 ns | 7.4 ns | 7 ns |
Factory Pack Quantity | 1000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 27 ns | 24 ns | 6.5 ns |
Typical Turn On Delay Time | 13 ns | 9.5 ns | 19 ns |
Unit Weight | 0.011640 oz | 0.011640 oz | 0.011640 oz |
Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
Product | - | - | Power MOSFET |