PartNumber | STP80N10F7 | STP80N6F6 | STP80N20M5 |
Description | MOSFET N-Ch 100V 0.0085Ohm typ 80A STripFET VII | MOSFET N-CH 60V 110A STripFET VI DeepGATE | IGBT Transistors MOSFET N-Ch 200V 0.019 61A Mdmesh V |
Manufacturer | STMicroelectronics | STMicroelectronics | ST |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-220-3 | TO-220-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | 60 V | - |
Id Continuous Drain Current | 80 A | 110 A | - |
Rds On Drain Source Resistance | 10 mOhms | 5.8 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3.5 V | 4.5 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 45 nC | 122 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 110 W | 150 W | - |
Configuration | Single | Single | - |
Tradename | STripFET | STripFET | - |
Packaging | Tube | Tube | - |
Series | STP80N10F7 | STP80N6F6 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Fall Time | 13 ns | - | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 32 ns | - | - |
Factory Pack Quantity | 1000 | 1000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 36 ns | - | - |
Typical Turn On Delay Time | 19 ns | - | - |
Unit Weight | 0.011640 oz | 0.011640 oz | - |
Qualification | - | AEC-Q101 | - |