PartNumber | STQ1HNK60R-AP | STQ1HN60K3-AP |
Description | MOSFET POWER MOSFET | MOSFET N-Ch 600V 6.4 Ohm 1.2A SuperMESH3 FET |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 600 V |
Id Continuous Drain Current | 400 mA | 400 mA |
Rds On Drain Source Resistance | 8.5 Ohms | 6.7 Ohms |
Vgs Gate Source Voltage | 30 V | 30 V |
Minimum Operating Temperature | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C |
Pd Power Dissipation | 30 W | 3 W |
Configuration | Single | Single |
Channel Mode | Enhancement | Enhancement |
Height | 4.95 mm | - |
Length | 4.95 mm | - |
Series | STQ1HNK60R | STQ1HN60K3-AP |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 3.94 mm | - |
Brand | STMicroelectronics | STMicroelectronics |
Fall Time | 25 ns | 31 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 5 ns | 10 ns |
Factory Pack Quantity | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 19 ns | 23 ns |
Typical Turn On Delay Time | 6.5 ns | 7 ns |
Unit Weight | 0.007760 oz | 0.007760 oz |
Vgs th Gate Source Threshold Voltage | - | 3.75 V |
Qg Gate Charge | - | 9.5 nC |
Tradename | - | SuperMESH |
Packaging | - | Ammo Pack |