| PartNumber | STS10P3LLH6 | STS10DN3LH5 | STS10N3LH5 |
| Description | MOSFET P-channel -30 V, 0.01 Ohm typ., -12.5 A, STripFET H6 Power MOSFET in a SO-8 package | MOSFET Dual N-CH 30 V 10 A SO-8 STri | MOSFET N-channel 30 V 10 A SO-8 STripFET |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SOIC-8 | SOIC-8 |
| Number of Channels | 1 Channel | 2 Channel | - |
| Transistor Polarity | P-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 12.5 A | 10 A | 10 A |
| Rds On Drain Source Resistance | 12 mOhms | 21 mOhms | 19 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 33 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.7 W | 2.5 W | - |
| Configuration | Single | Dual | - |
| Channel Mode | Enhancement | - | - |
| Tradename | STripFET | STripFET | STripFET |
| Packaging | Reel | Reel | Reel |
| Series | STS10P3LLH6 | STS10DN3LH5 | STS10N3LH5 |
| Transistor Type | 1 P-Channel Power MOSFET | 2 N-Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 45 ns | - | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 112 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 61 ns | - | - |
| Typical Turn On Delay Time | 12.8 ns | - | - |
| Unit Weight | 0.017870 oz | 0.010582 oz | 0.019048 oz |