PartNumber | STS8DN6LF6AG | STS8DN3LLH5 | STS8C5H30L |
Description | MOSFET Automotive-grade dual N-channel 60 V, 21 mOhm typ., 8 A STripFET F6 Power MOSFET in a SO-8 package | MOSFET Dual N-Ch 30V 10A STripFET V Pwr | MOSFET N/P-Ch 30V 8/5 Amp |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SOIC-8 | SO-8 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel, P-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 30 V | 30 V |
Id Continuous Drain Current | 8 A | 10 A | 5.4 A, 8 A |
Rds On Drain Source Resistance | 21 mOhms, 21 mOhms | 15.5 mOhms | 22 mOhms, 55 mOhms |
Vgs th Gate Source Threshold Voltage | 1 V | 1 V | 1 V |
Vgs Gate Source Voltage | 20 V | 22 V | 10 V |
Qg Gate Charge | 27 nC, 27 nC | 5.4 nC | 7 nC, 12.5 nC |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | + 150 C |
Pd Power Dissipation | 3.2 W | 2.7 W | 1.6 W, 2 W |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | - | Enhancement |
Qualification | AEC-Q101 | - | - |
Tradename | STripFET | STripFET | - |
Series | STS8DN6LF6AG | STS8DN3LLH5 | STS8C5H30L |
Transistor Type | 2 N-Channel | 2 N-Channel | 1 N-Channel Power MOSFET, 1 P-Channel Power MOSFET |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 7 ns, 7 ns | 3.5 ns | 8 ns, 35 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 20 ns, 20 ns | 4.2 ns | 14.5 ns, 35 ns |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 56 ns, 56 ns | 21.1 ns | 23 ns, 125 ns |
Typical Turn On Delay Time | 9.6 ns, 9.6 ns | 4 ns | 12 ns, 25 ns |
Packaging | - | Reel | Reel |
Unit Weight | - | 0.019048 oz | 0.002998 oz |
Height | - | - | 1.65 mm |
Length | - | - | 5 mm |
Type | - | - | MOSFET |
Width | - | - | 4 mm |
Forward Transconductance Min | - | - | 8.5 S, 10 S |