PartNumber | STT818B | STT6N3LLH6 | STT7P2UH7 |
Description | Bipolar Transistors - BJT PNP Lo-Volt Hi-Gain | MOSFET N-Ch 30V .025Ohm 6A STripFET VI | MOSFET P-CH 20V 7A SOT23-6 |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | Bipolar Transistors - BJT | MOSFET | FETs - Single |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-23-6 | SOT-23-6 | - |
Transistor Polarity | PNP | N-Channel | P-Channel |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | - 30 V | - | - |
Collector Base Voltage VCBO | - 30 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Collector Emitter Saturation Voltage | - 0.21 V | - | - |
Maximum DC Collector Current | 3 A | - | - |
Minimum Operating Temperature | - 65 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | STT818B | STT6N3LLH6 | STripFET |
Height | 1.3 mm | - | - |
Length | 3.05 mm | - | - |
Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
Width | 1.75 mm | - | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Continuous Collector Current | - 3 A | - | - |
Pd Power Dissipation | 1200 mW | 1.6 W | - |
Product Type | BJTs - Bipolar Transistors | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | Transistors | MOSFETs | - |
Unit Weight | 0.000229 oz | 0.000229 oz | 0.001270 oz |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Id Continuous Drain Current | - | 6 A | - |
Rds On Drain Source Resistance | - | 25 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 1 V | - |
Vgs Gate Source Voltage | - | 10 V | - |
Qg Gate Charge | - | 3.6 nC | - |
Channel Mode | - | Enhancement | - |
Tradename | - | STripFET | - |
Transistor Type | - | 1 N-Channel Power MOSFET | 1 P-Channel |
Fall Time | - | 5.4 ns | 84.5 ns |
Rise Time | - | 11.2 ns | 30.5 ns |
Typical Turn Off Delay Time | - | 9.4 ns | 128 ns |
Typical Turn On Delay Time | - | 4.8 ns | 12.5 ns |
Package Case | - | - | SOT-23-6 |
Operating Temperature | - | - | 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | SOT-23-6 |
FET Type | - | - | MOSFET P-Channel, Metal Oxide |
Power Max | - | - | 1.6W |
Drain to Source Voltage Vdss | - | - | 20V |
Input Capacitance Ciss Vds | - | - | 2390pF @ 16V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 7A (Tc) |
Rds On Max Id Vgs | - | - | 22.5 mOhm @ 3.5A, 4.5V |
Vgs th Max Id | - | - | 1V @ 250μA |
Gate Charge Qg Vgs | - | - | 22nC @ 4.5V |
Pd Power Dissipation | - | - | 1.6 W |
Vgs Gate Source Voltage | - | - | 8 V |
Id Continuous Drain Current | - | - | 7 A |
Vds Drain Source Breakdown Voltage | - | - | 20 V |
Vgs th Gate Source Threshold Voltage | - | - | 1 V |
Rds On Drain Source Resistance | - | - | 22.5 mOhms |
Qg Gate Charge | - | - | 22 nC |