PartNumber | STT2200N16P55XPSA1 | STT2PF60L |
Description | Discrete Semiconductor Modules THYR / DIODE MODULE DK | MOSFET P-Ch 60 Volt 2 Amp |
Manufacturer | Infineon | STMicroelectronics |
Product Category | Discrete Semiconductor Modules | MOSFET |
RoHS | Y | Y |
Product | Diode Power Modules | MOSFET Small Signal |
Type | Soft Starter | MOSFET |
Package / Case | BG-PS55-1 | SOT-23-6 |
Minimum Operating Temperature | - 40 C | - 55 C |
Maximum Operating Temperature | + 125 C | + 150 C |
Packaging | Tray | Reel |
Configuration | Dual | Single |
Brand | Infineon Technologies | STMicroelectronics |
Gate Trigger Current Igt | 200 mA | - |
Holding Current Ih Max | 300 mA | - |
Transistor Polarity | N-Channel | P-Channel |
Product Type | Discrete Semiconductor Modules | MOSFET |
Factory Pack Quantity | 1 | 3000 |
Subcategory | Discrete Semiconductor Modules | MOSFETs |
Vgs th Gate Source Threshold Voltage | 0.9 V | - |
Part # Aliases | SP001650702 STT2200N16P55 | - |
Technology | - | Si |
Mounting Style | - | SMD/SMT |
Number of Channels | - | 1 Channel |
Vds Drain Source Breakdown Voltage | - | 60 V |
Id Continuous Drain Current | - | 2 A |
Rds On Drain Source Resistance | - | 250 mOhms |
Vgs Gate Source Voltage | - | 15 V |
Pd Power Dissipation | - | 1.6 W |
Channel Mode | - | Enhancement |
Height | - | 1.3 mm |
Length | - | 3.05 mm |
Series | - | STT2PF60L |
Transistor Type | - | 1 P-Channel |
Width | - | 1.75 mm |
Fall Time | - | 34 ns |
Rise Time | - | 34 ns |
Typical Turn Off Delay Time | - | 42 ns |
Typical Turn On Delay Time | - | 44 ns |
Unit Weight | - | 0.000229 oz |