| PartNumber | STU6N90K5 | STU6N65M2-S | STU6N65M2 |
| Description | MOSFET N-channel 900 V, 0.91 Ohm typ., 6 A MDmesh K5 Power MOSFET in an IPAK package | MOSFET | MOSFET N-channel 650 V, 1.2 Ohm typ., 4 A MDmesh M2 Power MOSFET in IPAK package |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-251-3 | IPAK-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 900 V | 650 V | 650 V |
| Id Continuous Drain Current | 6 A | 2.5 A | 4 A |
| Rds On Drain Source Resistance | 910 mOhms | 1.35 Ohms | 1.35 Ohms |
| Vgs th Gate Source Threshold Voltage | 3 V | 2 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 10 V | 25 V |
| Qg Gate Charge | 11 nC | 9.8 nC | 9.8 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 110 W | 60 W | 60 W |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | MDmesh | - | MDmesh |
| Series | STU6N90K5 | STU6N65M2 | STU6N65M2 |
| Transistor Type | 1 N-Channel | 1 N Channel | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 15.5 ns | 20 ns | 20 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12.2 ns | 7 ns | 7 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30.4 ns | 6.5 ns | 6.5 ns |
| Typical Turn On Delay Time | 12.4 ns | 19 ns | 19 ns |
| Unit Weight | 0.011993 oz | - | 0.139332 oz |
| Packaging | - | - | Tube |
| Product | - | - | Power MOSFET |