STU6NF10

Mfr. #:: STU6NF10
Manufacturer:: STMicroelectronics
Description:: MOSFET N-Ch, 100V-0.22ohms 6A
Lifecycle:: New from this manufacturer.
Datasheet:: STU6NF10 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: STU6NF10 Datasheet STU6NF10 Datasheet (P4-P6)STU6NF10 Datasheet (P7-P9)STU6NF10 Datasheet (P10-P12)STU6NF10 Datasheet (P13-P14)
ECAD Model:
More Information:: STU6NF10 more Information STU6NF10 Product Details

Product Attribute
Attribute Value

Manufacturer:: STMicroelectronics

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: Through Hole

Package / Case:: TO-251-3

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 100 V

Id - Continuous Drain Current:: 6 A

Rds On - Drain-Source Resistance:: 250 mOhms

Vgs - Gate-Source Voltage:: 20 V

Minimum Operating Temperature:: - 65 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 30 W

Configuration:: Single

Channel Mode:: Enhancement

Tradename:: STripFET

Packaging:: Tube

Series:: STU6NF10

Transistor Type:: 1 N-Channel

Brand:: STMicroelectronics

Fall Time:: 3 ns

Product Type:: MOSFET

Rise Time:: 10 ns

Factory Pack Quantity:: 3000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 20 ns

Typical Turn-On Delay Time:: 6 ns

Unit Weight:: 0.139332 oz

Tags: STU6N, STU6, STU

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

STU6NF10 Description

***icroelectronics: N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK low gate charge STripFET͐2;2; Power MOSFET

*** Source Electronics: Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK Tube / MOSFET N-CH 100V 6A IPAK

***r Electronics: Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ure Electronics: Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - IPAK (TO-251)

***ark: N Channel Mosfet, 100V, 7.7A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:7.7A; On Resistance Rds(On):0.27Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No

*** Stop Electro: Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***(Formerly Allied Electronics): MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.21Ohm;ID 9.4A;I-Pak (TO-251AA);PD 48W

***ure Electronics: Single N-Channel 100 V 0.21 Ohm 25 nC HEXFET® Power Mosfet - TO-251AA

***ineon SCT: 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***SIT Distribution GmbH: Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

***ark: N Channel Mosfet, 100V, 9.4A, Ipak; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:9.4A; On Resistance Rds(On):0.21Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 9.4 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 210 / Gate-Source Voltage V = 20 / Fall Time ns = 23 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 32 / Turn-ON Delay Time ns = 4.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-251 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 48

***ment14 APAC: MOSFET, N, 100V, 9.1A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):210mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:9.4A; Current Temperature:25°C; Fall Time tf:23ns; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.2°C/W; Package / Case:IPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Pulse Current Idm:38A; Rise Time:23ns; SMD Marking:IRFU120N; Termination Type:Through Hole; Turn Off Time:32ns; Turn On Time:4.5ns; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

***-Wing Technology: Tube Through Hole N-Channel Single Mosfet Transistor 8.4A Tc 8.4A 32W 28ns

***Yang: Trans MOSFET N-CH 100V 8.4A 3-Pin(3+Tab) IPAK Rail - Bulk

***inecomponents.com: N-CH/100V/8.4A/0.2OHM/Substitute of IRFU120TU & IRFU120A

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:8.4A; On Resistance, Rds(on):200mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:I-PAK ;RoHS Compliant: Yes

***emi: Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 10 A, 180 mΩ, IPAK

***ark: MOSFET Transistor, N Channel, 10 A, 100 V, 0.142 ohm, 10 V, 2 V

***r Electronics: Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: MOSFET, N CH, 100V, 10A, TO-251AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.142ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V;

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

***(Formerly Allied Electronics): MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.205Ohm;ID -13A;I-Pak (TO-251AA);PD 66W

***ineon SCT: -100V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

***ure Electronics: Single P-Channel 100 V 205 mOhm 58 nC HEXFET® Power Mosfet - IPAK

***SIT Distribution GmbH: Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

***ineon: Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):205mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:I-PAK ;RoHS Compliant: Yes

***nell: MOSFET, P, I-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.205ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 66W; Transistor Case Style: TO-251AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018); Alternate Case Style: TO-251; Current Id Max: -13A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Lead Length: 9.65mm; Lead Spacing: 2.28mm; No. of Transistors: 1; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 52A; SMD Marking: IRFU5410PBF; Termination Type: Through Hole; Turn Off Time: 45ns; Turn On Time: 15ns; Voltage Vds Typ: -100V; Voltage Vgs Max: -4V; Voltage Vgs Rds on Measurement: -10V

***ure Electronics: Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - IPAK (TO-251)

***SIT Distribution GmbH: Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

***nell: MOSFET, N-CH, 100V, 4.3A, TO-251-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 4.3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.54ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 25W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Operating Temperature Min: -55°C

STU6NF10 More Information

Standard Products: STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.

Market price

Part #	Mfg.	Description	Stock	Price
STU6NF10 DISTI # V36:1790_06567881	STMicroelectronics	Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R RoHS: Compliant	0
STU6NF10 DISTI # 497-12700-5-ND	STMicroelectronics	MOSFET N-CH 100V 6A IPAK RoHS: Compliant Min Qty: 1 Container: Tube	655In Stock	5025:$0.5077 2550:$0.5344 525:$0.7252 150:$0.8779 75:$1.0688 10:$1.1260 1:$1.2600
STU6NF10 DISTI # STU6NF10	STMicroelectronics	Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R (Alt: STU6NF10) RoHS: Compliant Min Qty: 75 Container: Tape and Reel	Europe - 0	750:€0.1969 450:€0.2259 300:€0.2599 150:€0.3189 75:€0.3999
STU6NF10 DISTI # STU6NF10	STMicroelectronics	Trans MOSFET N-CH 100V 6A 3-Pin(3+Tab) IPAK T/R - Rail/Tube (Alt: STU6NF10) RoHS: Compliant Min Qty: 3000 Container: Tube	Americas - 0	30000:$0.4429 15000:$0.4519 9000:$0.4729 6000:$0.4949 3000:$0.5199
STU6NF10 DISTI # 57P2563	STMicroelectronics	PTD LOW VOLTAGE	0	10000:$0.4520 2500:$0.4650 1000:$0.5760 500:$0.6600 100:$0.7460 10:$0.9720 1:$1.1400
STU6NF10 DISTI # 511-STU6NF10	STMicroelectronics	MOSFET N-Ch, 100V-0.22ohms 6A RoHS: Compliant	3085	1:$1.1400 10:$0.9720 100:$0.7470 500:$0.6600 1000:$0.5210 3000:$0.4620 9000:$0.4450

Image	Part #	Description
	Mfr.#: AD5272BRMZ-20-RL7 OMO.#: OMO-AD5272BRMZ-20-RL7	Digital Potentiometer ICs 1024p 5v SGL CHI2C 50-TP Mem Digi Rstat
	Mfr.#: ADUM110N1BRZ OMO.#: OMO-ADUM110N1BRZ	Digital Isolators 2 Channel 3kV Digital Isolator
	Mfr.#: 2N2906A OMO.#: OMO-2N2906A	Bipolar Transistors - BJT PNP Gen Pur SS
	Mfr.#: SF-0603HI450M-2 OMO.#: OMO-SF-0603HI450M-2	Surface Mount Fuses 4.5A Slow Blow 0603 SinglFuse
	Mfr.#: AD5272BRMZ-20-RL7 OMO.#: OMO-AD5272BRMZ-20-RL7-ANALOG-DEVICES-INC-ADI	Digital Potentiometer ICs 1024p 5v SGL CHI2C 50-TP Mem Digi Rstat
	Mfr.#: STU10P6F6 OMO.#: OMO-STU10P6F6-STMICROELECTRONICS	MOSFET P-CH 60V 10A IPAK
	Mfr.#: ADUM110N1BRZ OMO.#: OMO-ADUM110N1BRZ-ANALOG-DEVICES-INC-ADI	Digital Isolators 2 Channel 3kV Digital Isolato
	Mfr.#: 2N2906A OMO.#: OMO-2N2906A-ON-SEMICONDUCTOR	PNP SS GP AMP MED PWR TRANS.
	Mfr.#: RK73H1JTTD4702F OMO.#: OMO-RK73H1JTTD4702F-1090	Thick Film Resistors - SMD 1/10watts 47Kohms 1%
	Mfr.#: HMU2103NL OMO.#: OMO-HMU2103NL-PULSE-ELECTRONICS	XFMR CMC MODULE AECQ BATT MNGT

STU6NF10

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes