| PartNumber | STU6N62K3 | STU6N60M2 | STU6N60DM2 |
| Description | MOSFET N-Ch, 620V-1.1ohms 5.5A | MOSFET N-CH 600V 1.06Ohm 4.5A MDmesh M2 | MOSFET |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-251-3 | TO-251-3 | IPAK-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 620 V | 650 V | 600 V |
| Id Continuous Drain Current | 5.5 A | 4.5 A | 5 A |
| Rds On Drain Source Resistance | 1.28 Ohms | 1.2 Ohms | 1.1 Ohms |
| Vgs Gate Source Voltage | 30 V | 25 V | 25 V |
| Qg Gate Charge | 34 nC | 8 nC | 6.2 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 90 W | 60 W | 60 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Tradename | SuperMESH | MDmesh | - |
| Packaging | Tube | Tube | - |
| Height | 6.2 mm | - | - |
| Length | 6.6 mm | - | - |
| Series | STU6N62K3 | STU6N60M2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 2.4 mm | - | - |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 19 ns | 22.5 ns | 19.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 12.5 ns | 7.4 ns | 5.6 ns |
| Factory Pack Quantity | 3000 | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 27 ns | 24 ns | 12 ns |
| Typical Turn On Delay Time | 13 ns | 9.5 ns | 9.2 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | 3.25 V |