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STU6NF10

P1-P3P4-P6P7-P9P10-P12P13-P14
November 2008 Rev 6 1/14
14
STD6NF10
STU6NF10
N-channel 100 V, 0.22 Ω, 6 A, DPAK, IPAK
low gate charge STripFET™ Power MOSFET
Features
■ Exceptional dv/dt capability
■ 100% avalanche tested
Application
■ Switching applications
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for telecom and computer applications.
It is also intended for any applications with low
gate drive requirements.
Figure 1. Internal schematic diagram
Type V
DSS
R
DS(on)
max I
D
STD6NF10 100 V < 0.250 Ω 6 A
STU6NF10 100 V < 0.250 Ω 6 A
DPAK
3
2
1
1
3
IPAK
Table 1. Device summary
Order codes Marking Package Packaging
STD6NF10T4 D6NF10 DPAK Tape and reel
STU6NF10 6NF10 IPAK Tube
www.st.com
Contents STD6NF10, STU6NF10
2/14
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STD6NF10, STU6NF10 Electrical ratings
3/14
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 100 V
V
GS
Gate- source voltage ± 20 V
I
D
Drain current (continuous) at T
C
= 25 °C 6 A
I
D
Drain current (continuous) at T
C
= 100 °C 4 A
I
DM
(1)
1. Pulse width limited by safe operating area.
Drain current (pulsed) 24 A
P
tot
Total dissipation at T
C
= 25 °C 30 W
Derating factor 0.2 W/°C
dv/dt
(2)
2. I
SD
≤ 6 A, di/dt ≤ 300 A/µs, V
DD
≤ V
(BR)DSS
, Tj ≤ T
JMAX
Peak diode recovery voltage slope 40 V/ns
E
AS
(3)
3. Starting T
j
= 25 °C, I
D
= 3 A, V
DD
= 50 V
Single pulse avalanche energy 200 mJ
T
stg
Storage temperature
-65 to 175 °C
T
j
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 5 °C/W
R
thj-amb
Thermal resistance junction-ambient max 100 °C/W
T
J
Maximum lead temperature for soldering purpose 300 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

STU6NF10

Mfr. #:
Buy STU6NF10
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch, 100V-0.22ohms 6A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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