STU9N

STU9N60M2 vs STU9N65M2

 
PartNumberSTU9N60M2STU9N65M2
DescriptionMOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2MOSFET N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-251-3TO-251-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage650 V650 V
Id Continuous Drain Current5.5 A5 A
Rds On Drain Source Resistance780 mOhms900 mOhms
Vgs th Gate Source Threshold Voltage3 V3 V
Vgs Gate Source Voltage25 V25 V
Qg Gate Charge10 nC10 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation60 W60 W
ConfigurationSingleSingle
TradenameMDmeshMDmesh
PackagingTubeTube
SeriesSTU9N60M2STU9N65M2
Transistor Type1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics
Fall Time13.5 ns18 ns
Product TypeMOSFETMOSFET
Rise Time7.5 ns6.6 ns
Factory Pack Quantity30003000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time22 ns22.5 ns
Typical Turn On Delay Time8.8 ns7.5 ns
Unit Weight0.139332 oz0.139332 oz
Product-Power MOSFET
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STU9N60M2 MOSFET N-CH 600V 0.72Ohm 5.5A MDMesh M2
STU9N65M2 MOSFET N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in IPAK package
STU9N60M2 MOSFET N-CH 600V 5.5A IPAK
STU9N65M2 MOSFET N-CH 650V 5A IPAK
STU9NA60 New and Original
STU9NB80 New and Original
STU9NB80I New and Original
STU9NC80Z New and Original
STU9NC80ZI New and Original
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