STW11NM

STW11NM80 vs STW11NM80 W11NM80 vs STW11NM80,W11NM80,

 
PartNumberSTW11NM80STW11NM80 W11NM80STW11NM80,W11NM80,
DescriptionMOSFET N-Ch 800 Volt 11 Amp Power MDmesh
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current11 A--
Rds On Drain Source Resistance400 mOhms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation150 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
PackagingTube--
Height20.15 mm--
Length15.75 mm--
SeriesSTW11NM80--
Transistor Type1 N-Channel--
TypeMOSFET--
Width5.15 mm--
BrandSTMicroelectronics--
Forward Transconductance Min8 S--
Fall Time15 ns--
Product TypeMOSFET--
Rise Time17 ns--
Factory Pack Quantity600--
SubcategoryMOSFETs--
Typical Turn Off Delay Time46 ns--
Typical Turn On Delay Time22 ns--
Unit Weight1.340411 oz--
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STW11NM80 MOSFET N-Ch 800 Volt 11 Amp Power MDmesh
STW11NM80 MOSFET N-CH 800V 11A TO-247
STW11NM80 W11NM80 New and Original
STW11NM80,W11NM80, New and Original
STW11NM80??200 New and Original
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