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STW18NM

STW18NM60N vs STW18NM80 vs STW18NM60ND

 
PartNumberSTW18NM60NSTW18NM80STW18NM60ND
DescriptionMOSFET N-channel 600 V 0.27ohms 13A MdmeshMOSFET N-channel 800 V MDMeshMOSFET N-CH 600V 13A TO-247
ManufacturerSTMicroelectronicsSTMicroelectronicsST
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V800 V-
Id Continuous Drain Current13 A17 A-
Rds On Drain Source Resistance260 mOhms295 mOhms-
ConfigurationSingleSingleSingle
TradenameMDmeshMDmesh-
PackagingTubeTubeTube
SeriesSTW18NM60NSTW18NM80N-channel MDmesh
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeMOSFETMOSFET-
Factory Pack Quantity600600-
SubcategoryMOSFETsMOSFETs-
Unit Weight1.340411 oz1.340411 oz1.340411 oz
Vgs Gate Source Voltage-30 V-
Qg Gate Charge-70 nC-
Minimum Operating Temperature-- 65 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Pd Power Dissipation-190 W-
Fall Time-50 ns18 ns
Rise Time-28 ns15.5 ns
Typical Turn Off Delay Time-96 ns13 ns
Typical Turn On Delay Time-18 ns55 ns
Package Case--TO-247-3
Pd Power Dissipation--130 W
Vgs Gate Source Voltage--25 V
Id Continuous Drain Current--13 A
Vds Drain Source Breakdown Voltage--650 V
Vgs th Gate Source Threshold Voltage--4 V
Rds On Drain Source Resistance--290 mOhms
Qg Gate Charge--34 nC
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics 		STW18NM60N MOSFET N-channel 600 V 0.27ohms 13A Mdmesh
STW18NM80 MOSFET N-channel 800 V MDMesh
STW18NM60N MOSFET N-CH 600V 13A TO-247
STW18NM60ND MOSFET N-CH 600V 13A TO-247
STW18NM80 MOSFET N-CH 800V 17A TO-247
STW18NM60N,W18NM60N New and Original
STW18NM80,18NM80 New and Original
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