PartNumber | STW33N60M6 | STW33N60DM2 | STW33N60M2 |
Description | MOSFET N-channel 600 V, 105 mOhm typ., 26 A MDmesh M6 Power MOSFET in a TO-247 package | MOSFET N-channel 600 V, 0.110 Ohm typ., 24 A MDmesh DM2 Power MOSFET in TO-247 package | MOSFET N-CH 600V 0.108Ohm typ. 26A MDmesh M2 |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | 600 V |
Id Continuous Drain Current | 26 A | 24 A | 26 A |
Rds On Drain Source Resistance | 125 mOhms | 130 mOhms | 108 mOhms |
Configuration | Single | Single | Single |
Packaging | Tube | - | Tube |
Series | M6 | STW33N60DM2 | STW33N60M2 |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 600 | 600 | 600 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
Vgs Gate Source Voltage | - | 25 V | 25 V |
Qg Gate Charge | - | 43 nC | 45.5 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Pd Power Dissipation | - | 190 W | 190 W |
Channel Mode | - | Enhancement | - |
Tradename | - | MDmesh | MDmesh |
Fall Time | - | 9 ns | 9 ns |
Rise Time | - | 8 ns | 9.6 ns |
Typical Turn Off Delay Time | - | 62 ns | 109 ns |
Typical Turn On Delay Time | - | 17 ns | 16 ns |
Unit Weight | - | 1.340411 oz | 1.340411 oz |
Transistor Type | - | - | 1 N-Channel |