STW35N60

STW35N60DM2 vs STW35N60M2-EP

 
PartNumberSTW35N60DM2STW35N60M2-EP
DescriptionMOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 packageMOSFET
ManufacturerSTMicroelectronicsSTMicroelectronics
Product CategoryMOSFETMOSFET
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-247-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage600 V-
Id Continuous Drain Current28 A-
Rds On Drain Source Resistance110 mOhms-
Vgs th Gate Source Threshold Voltage3 V-
Vgs Gate Source Voltage25 V-
Qg Gate Charge54 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation210 W-
ConfigurationSingle-
Channel ModeEnhancement-
TradenameMDmesh-
SeriesSTW35N60DM2STW35N60M2-EP
BrandSTMicroelectronicsSTMicroelectronics
Fall Time10.7 ns-
Product TypeMOSFETMOSFET
Rise Time17 ns-
Factory Pack Quantity600600
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time68 ns-
Typical Turn On Delay Time21.2 ns-
Unit Weight1.340411 oz-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STW35N60DM2 MOSFET N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in TO-247 package
STW35N60M2-EP MOSFET
STW35N60M2-EP PTD HIGH VOLTAGE - Trays (Alt: STW35N60M2-EP)
STW35N60DM2 MOSFET N-CH 600V 28A
STW35N60C3 New and Original
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