STW65

STW65N60DM6 vs STW65N65DM2AG vs STW65N80K5

 
PartNumberSTW65N60DM6STW65N65DM2AGSTW65N80K5
DescriptionMOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 packageMOSFET Automotive-grade N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 packageMOSFET N-CH 800V 46A
ManufacturerSTMicroelectronicsSTMicroelectronics-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-247-3TO-247-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage600 V650 V-
Id Continuous Drain Current38 A60 A-
Rds On Drain Source Resistance71 mOhms50 mOhms-
Qg Gate Charge61 nC27 nC-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingTubeTube-
SeriesDM6STW65N65DM2AG-
BrandSTMicroelectronicsSTMicroelectronics-
Product TypeMOSFETMOSFET-
Factory Pack Quantity600600-
SubcategoryMOSFETsMOSFETs-
Vgs th Gate Source Threshold Voltage-4 V-
Vgs Gate Source Voltage-25 V-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Pd Power Dissipation-446 W-
Qualification-AEC-Q101-
Tradename-MDmesh-
Height-5.15 mm-
Length-20.15 mm-
Product-Power MOSFET-
Type-High Voltage-
Width-15.75 mm-
Fall Time-11.5 ns-
Rise Time-13.5 ns-
Typical Turn Off Delay Time-114 ns-
Typical Turn On Delay Time-33 ns-
Unit Weight-1.340411 oz-
Manufacturer Part # Description RFQ
STMicroelectronics
STMicroelectronics
STW65N60DM6 MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 package
STW65N65DM2AG MOSFET Automotive-grade N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package
STW65N65DM2AG MOSFET N-CH 650V 60A
STW65N80K5 MOSFET N-CH 800V 46A
STW6553A New and Original
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