PartNumber | STW65N60DM6 | STW65N65DM2AG | STW65N80K5 |
Description | MOSFET N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 package | MOSFET Automotive-grade N-channel 650 V, 0.042 Ohm typ., 60 A MDmesh DM2 Power MOSFET in a TO-247 package | MOSFET N-CH 800V 46A |
Manufacturer | STMicroelectronics | STMicroelectronics | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-247-3 | TO-247-3 | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 600 V | 650 V | - |
Id Continuous Drain Current | 38 A | 60 A | - |
Rds On Drain Source Resistance | 71 mOhms | 50 mOhms | - |
Qg Gate Charge | 61 nC | 27 nC | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | - |
Series | DM6 | STW65N65DM2AG | - |
Brand | STMicroelectronics | STMicroelectronics | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 600 | 600 | - |
Subcategory | MOSFETs | MOSFETs | - |
Vgs th Gate Source Threshold Voltage | - | 4 V | - |
Vgs Gate Source Voltage | - | 25 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 446 W | - |
Qualification | - | AEC-Q101 | - |
Tradename | - | MDmesh | - |
Height | - | 5.15 mm | - |
Length | - | 20.15 mm | - |
Product | - | Power MOSFET | - |
Type | - | High Voltage | - |
Width | - | 15.75 mm | - |
Fall Time | - | 11.5 ns | - |
Rise Time | - | 13.5 ns | - |
Typical Turn Off Delay Time | - | 114 ns | - |
Typical Turn On Delay Time | - | 33 ns | - |
Unit Weight | - | 1.340411 oz | - |