| PartNumber | STW8N90K5 | STW8N120K5 | STW8NB100 |
| Description | MOSFET N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-247 package | MOSFET N-channel 1200 V, 0.62 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-3PF package | MOSFET N-CH 1KV 7.3A TO-247 |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Tradename | MDmesh | - | - |
| Series | STW8N90K5 | STW8N120K5 | - |
| Brand | STMicroelectronics | STMicroelectronics | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 600 | 600 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.156264 oz | - | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 1.2 kV | - |
| Id Continuous Drain Current | - | 6 A | - |
| Rds On Drain Source Resistance | - | 2 Ohms | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 30 V | - |
| Qg Gate Charge | - | 13.7 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 130 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Packaging | - | Tube | - |
| Fall Time | - | 27 ns | - |
| Rise Time | - | 11 ns | - |
| Typical Turn Off Delay Time | - | 40 ns | - |
| Typical Turn On Delay Time | - | 15.5 ns | - |