PartNumber | STY100NM60N | STY100NS20FD |
Description | MOSFET N-Ch 600V 0.025 Ohm 98A MDmesh II FET | MOSFET N-Ch 200 Volt 100 A |
Manufacturer | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | Max247-3 | Max247-3 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 600 V | 200 V |
Id Continuous Drain Current | 74 A | 100 A |
Rds On Drain Source Resistance | 29 mOhms | 24 mOhms |
Vgs th Gate Source Threshold Voltage | 4 V | - |
Vgs Gate Source Voltage | 25 V | 20 V |
Pd Power Dissipation | 625 W | 450 W |
Configuration | Single | Single |
Tradename | MDmesh | - |
Packaging | Tube | Tube |
Series | STY100NM60N | STY100NS20FD |
Transistor Type | 1 N-Channel | 1 N-Channel |
Brand | STMicroelectronics | STMicroelectronics |
Product Type | MOSFET | MOSFET |
Factory Pack Quantity | 600 | 600 |
Subcategory | MOSFETs | MOSFETs |
Unit Weight | 1.340411 oz | 1.340411 oz |
Minimum Operating Temperature | - | - 65 C |
Maximum Operating Temperature | - | + 150 C |
Channel Mode | - | Enhancement |
Height | - | 20.3 mm |
Length | - | 15.9 mm |
Type | - | MOSFET |
Width | - | 5.3 mm |
Fall Time | - | 140 ns |
Rise Time | - | 140 ns |
Typical Turn On Delay Time | - | 42 ns |