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| PartNumber | SUB85N10-10 | SUB85N10 | SUB85N10-10-E3 |
| Description | MOSFET 100V 85A 250W | MOSFET RECOMMENDED ALT 781-SUM110N10-09-E3 | |
| Manufacturer | VISHAY | - | - |
| Product Category | IC Chips | - | - |
| Series | SUx85Nxx | - | - |
| Packaging | Reel | - | - |
| Unit Weight | 0.050717 oz | - | - |
| Mounting Style | SMD/SMT | - | - |
| Tradename | TrenchFET | - | - |
| Package Case | TO-252-3 | - | - |
| Technology | Si | - | - |
| Number of Channels | 1 Channel | - | - |
| Configuration | Single | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Pd Power Dissipation | 3.75 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Fall Time | 130 ns | - | - |
| Rise Time | 90 ns | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Id Continuous Drain Current | 85 A | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Rds On Drain Source Resistance | 10.5 mOhms | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Turn Off Delay Time | 55 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Channel Mode | Enhancement | - | - |