 |  | | |
| PartNumber | SUD09P10-195-GE3 | SUD09P10-195 | SUD09P10-195-E3 |
| Description | MOSFET -100V 195mOhms@ 10V -8.8A | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 8.8 A | - | - |
| Rds On Drain Source Resistance | 195 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 23.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 32.1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | - | - |
| Height | 2.38 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | SUD | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 12 S | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 12 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 33 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.011993 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SUD09P10-195-GE3 | MOSFET -100V 195mOhms@ 10V -8.8A | |
| SUD09P10-195-GE3-CUT TAPE | New and Original | ||
| SUD09P10-195 | New and Original | ||
| SUD09P10-195-E3 | New and Original | ||
Vishay |
SUD09P10-195-GE3 | MOSFET P-CH 100V 8.8A DPAK |