PartNumber | SUM60030E-GE3 | SUM60020E-GE3 | SUM60N02-3M9P-E3 |
Description | MOSFET N-Channel 80V (D-S) TrenchFET | MOSFET N-Channel 80 V (D-S) MOSFET | MOSFET 20V 60A 120W 3.9mohm @ 10V |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | E |
Technology | Si | Si | Si |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Tube | Reel |
Series | SUM | - | SUM |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 800 | 50 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.068654 oz | - | 0.050717 oz |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | TO-263-4 | TO-263-3 |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 80 V | - |
Id Continuous Drain Current | - | 150 A | - |
Rds On Drain Source Resistance | - | 2.47 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 151.2 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 175 C | - |
Pd Power Dissipation | - | 375 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Fall Time | - | 15 ns | - |
Rise Time | - | 13 ns | - |
Typical Turn Off Delay Time | - | 50 ns | - |
Typical Turn On Delay Time | - | 30 ns | - |
Height | - | - | 4.83 mm |
Length | - | - | 10.67 mm |
Width | - | - | 9.65 mm |