PartNumber | SUP60020E-GE3 | SUP60N02-4M5P-E3 | SUP60030E-GE3 |
Description | MOSFET N-Channel 80 V (D-S) MOSFET | MOSFET RECOMMENDED ALT 78-SUP85N03-3M6P-GE3 | MOSFET 80V Vds 20V Vgs TO-220 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | E | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-220-3 | - | TO-220-3 |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 80 V | - | 80 V |
Id Continuous Drain Current | 150 A | - | 120 A |
Rds On Drain Source Resistance | 2.8 mOhms | - | 2.8 mOhms |
Vgs th Gate Source Threshold Voltage | 2 V | - | 2 V |
Vgs Gate Source Voltage | 20 V | - | 20 V |
Qg Gate Charge | 151.2 nC | - | 141 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Pd Power Dissipation | 375 W | - | 375 W |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Tube | Tube | Tube |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Fall Time | 15 ns | - | 14 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 13 ns | - | 24 ns |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 50 ns | - | 34 ns |
Typical Turn On Delay Time | 30 ns | - | 24 ns |
Series | - | SUP | SUP |
Unit Weight | - | 0.211644 oz | 0.081130 oz |
Height | - | - | 15.49 mm |
Length | - | - | 10.41 mm |
Width | - | - | 4.7 mm |
Forward Transconductance Min | - | - | 82 S |