Si440

SI4401BDY-T1-E3 vs SI4401DDY-T1-GE3 vs SI4401BDY-T1-GE3

 
PartNumberSI4401BDY-T1-E3SI4401DDY-T1-GE3SI4401BDY-T1-GE3
DescriptionMOSFET 40V 10.5A 0.014OhmMOSFET -40V Vds 20V Vgs SO-8MOSFET 40V 10.5A 2.9W 14mohm @ 10V
ManufacturerVishayVishayVishay
Product CategoryMOSFETMOSFETMOSFET
RoHSEYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8SO-8SO-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Id Continuous Drain Current10.5 A16.1 A10.5 A
Rds On Drain Source Resistance14 mOhms15 mOhms14 mOhms
Vgs th Gate Source Threshold Voltage1 V1.2 V1 V
Vgs Gate Source Voltage10 V10 V10 V
Qg Gate Charge40 nC64 nC40 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2.9 W6.3 W2.9 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
TradenameTrenchFETTrenchFETTrenchFET
PackagingReelReelReel
SeriesSI4SI4SI4
Transistor Type1 P-Channel1 P-Channel1 P-Channel
BrandVishay / SiliconixVishay / SiliconixVishay / Siliconix
Forward Transconductance Min26 S37 S26 S
Fall Time47 ns9 ns47 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time15 ns11 ns15 ns
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time97 ns45 ns97 ns
Typical Turn On Delay Time16 ns13 ns16 ns
Part # AliasesSI4401BDY-E3SI4401DDY-GE3SI4401BDY-GE3
Unit Weight0.006596 oz0.017870 oz0.006596 oz
Vds Drain Source Breakdown Voltage-40 V-
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
Si4401FDY-T1-GE3 MOSFET -40V Vds 20V Vgs SO-8
SI4401BDY-T1-E3 MOSFET 40V 10.5A 0.014Ohm
SI4403CDY-T1-GE3 MOSFET 1.8V P-Channel
SI4401DDY-T1-GE3 MOSFET -40V Vds 20V Vgs SO-8
SI4401BDY-T1-GE3 MOSFET 40V 10.5A 2.9W 14mohm @ 10V
SI4403DDY-T1-GE3 MOSFET -20V Vds 8V Vgs SO-8
SI4403BDY-T1-GE3 MOSFET RECOMMENDED ALT 78-SI4403CDY-T1-GE3
SI4403BDY-T1-E3 MOSFET RECOMMENDED ALT 78-SI4403CDY-T1-GE3
SI4401DY-T1-E3 MOSFET RECOMMENDED ALT 781-SI4401DDY-T1-GE3
Vishay
Vishay
SI4401DDY-T1-GE3 IGBT Transistors MOSFET 40V 16.1A P-CH MOSFET
SI4403BDY-T1-E3 IGBT Transistors MOSFET 20V 9A 2.5W
SI4401DY-T1-GE3 IGBT Transistors MOSFET 40V 10.5A 3.0W 15.5mohm @ 10V
SI4401BDY-T1-E3 MOSFET P-CH 40V 8.7A 8-SOIC
SI4401BDY-T1-GE3 MOSFET P-CH 40V 8.7A 8-SOIC
SI4401DY-T1-E3 MOSFET P-CH 40V 8.7A 8-SOIC
SI4403BDY-T1-GE3 MOSFET P-CH 20V 7.3A 8SOIC
SI4403CDY-T1-GE3 MOSFET P-CH 20V 13.4A 8SOIC
SI4403DDY-T1-GE3 MOSFET P-CH 20V 15.4A 8SOIC
SI4401FDY-T1-GE3 MOSFET P-CHAN 40V SO-8
SI4401BDY-T1-E3-CUT TAPE New and Original
SI4401DDY-T1-GE3-CUT TAPE New and Original
SI4403CDY-T1-GE3-CUT TAPE New and Original
SI4400 New and Original
SI4400DY-T1-E3 New and Original
SI4400M3 New and Original
SI4401 New and Original
SI4401BD New and Original
SI4401BDY New and Original
SI4401BDY-E3 New and Original
SI4401BDY-T1 New and Original
SI4401DDY New and Original
SI4401DDY-T1-E3 New and Original
SI4401DY MOSFET 40V 10.5A 3W
SI4401DY-T1 MOSFET 40V 10.5A 3W
SI4401DY-TI-E3 New and Original
SI4401DYT1 Small Signal Field-Effect Transistor, 8.7A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SI4402DY New and Original
SI4402DYT1 New and Original
SI4403 New and Original
SI4403BDY *** FREE SHIPPING ORDERS OVER $100 *** MOSFET Transistor, P-Channel, SO
SI4403BDY-T1 New and Original
SI4403BDY-T1-E3. New and Original
SI4403CDY Small Signal Field-Effect Transistor, 13.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
SI4403DY MOSFET Transistor, P-Channel, SO
SI4403DY-T1-E3 MOSFET RECOMMENDED ALT 78-SI4403CDY-T1-GE3
SI4403DY-T1-GE3 New and Original
SI4404 New and Original
SI4404BDY-T1-GE3 New and Original
SI4404DY MOSFET 30V 23A 3.5W
SI4404DY 30V 15A 1.6W S New and Original
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