 | |  | |
| PartNumber | TC8020K6-G | TC8020K6-G M937 | TC8020K6-G(QFN-56)MICRO |
| Description | MOSFET 6 PAIR N/P CHANNEL MOSFET | MOSFET 6-Pair, N- and P-Ch Enhancement MOSFET | |
| Manufacturer | Microchip | Microchip | - |
| Product Category | MOSFET | MOSFET | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | QFN-56 | QFN-56 | - |
| Number of Channels | 12 Channel | 12 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | - |
| Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
| Rds On Drain Source Resistance | 9 Ohms, 10 Ohms | 6 Ohms | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tray | Reel | - |
| Transistor Type | 6 N-Channel, 6 P-Channel | 6 N-Channel, 6 P-Channel | - |
| Brand | Microchip Technology | Microchip Technology | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 250 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.006751 oz | 0.006751 oz | - |
| RoHS | - | Y | - |
| Id Continuous Drain Current | - | 3.2 A | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Series | - | TC8020 | - |
| Fall Time | - | 15 ns | - |
| Rise Time | - | 15 ns | - |
| Typical Turn Off Delay Time | - | 20 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Microchip Technology |
TC8020K6-G | MOSFET 6 PAIR N/P CHANNEL MOSFET | |
| TC8020K6-G-M937 | MOSFET MOSFET ENH-MODE | ||
| TC8020K6-G M937 | MOSFET 6-Pair, N- and P-Ch Enhancement MOSFET | ||
| TC8020K6-G | MOSFET 6 PAIR N/P CHANNEL MOSFET | ||
| TC8020K6-G M937 | MOSFET 6-Pair, N- and P-Ch Enhancement MOSFET | ||
| TC8020K6-G(QFN-56)MICRO | New and Original | ||
| TC8020K6-G-M937 | MOSFET 6N/6P-CH 200V 56VQFN |