TH58BVG2

TH58BVG2S3HTA00 vs TH58BVG2S3HBAI6 vs TH58BVG2S3HBAI4

 
PartNumberTH58BVG2S3HTA00TH58BVG2S3HBAI6TH58BVG2S3HBAI4
DescriptionNAND Flash 4Gb 24nm SLC NAND (EEPROM)NAND Flash 4Gb 24nm SLC NAND (EEPROM)NAND Flash 4Gb 24nm SLC NAND (EEPROM)
ManufacturerToshibaToshibaToshiba
Product CategoryNAND FlashNAND FlashNAND Flash
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTSOP-48VFBGA-67TFBGA-63
Memory Size4 Gbit4 Gbit4 Gbit
Interface TypeParallelParallelParallel
Organization512 M x 8512 M x 8512 M x 8
Data Bus Width8 bit8 bit8 bit
Supply Voltage Min2.7 V2.7 V2.7 V
Supply Voltage Max3.6 V3.6 V3.6 V
Minimum Operating Temperature0 C- 40 C- 40 C
Maximum Operating Temperature+ 70 C+ 85 C+ 85 C
PackagingTrayTrayTray
Memory TypeNANDNANDNAND
ProductNAND Flash-NAND Flash
BrandToshiba MemoryToshiba MemoryToshiba Memory
Moisture SensitiveYesYesYes
Product TypeNAND FlashNAND FlashNAND Flash
Factory Pack Quantity96338210
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Timing Type--Synchronous
Supply Current Max--30 mA
Speed--25 ns
Architecture--Block Erase
Maximum Clock Frequency---
Manufacturer Part # Description RFQ
Toshiba Memory
Toshiba Memory
TH58BVG2S3HTA00 NAND Flash 4Gb 24nm SLC NAND (EEPROM)
TH58BVG2S3HTAI0 NAND Flash 4Gb 24nm I-Temp SLC NAND (EEPROM)
TH58BVG2S3HBAI6 NAND Flash 4Gb 24nm SLC NAND (EEPROM)
TH58BVG2S3HBAI4 NAND Flash 4Gb 24nm SLC NAND (EEPROM)
TH58BVG2S3HTAI0 EEPROM 4 Gbit CMOS NAND EEPROM
TH58BVG2S3HTA00 EEPROM 4 Gbit CMOS NAND EEPROM
TH58BVG2S3HBAI4 4GB SLC BENAND 24NM BGA 9X11 (EE Benand
TH58BVG2S3HTA00(B4H) New and Original
TH58BVG2S3HTA00_REEL NAND Flash Memory (Alt: TH58BVG2S3HTA00_REEL)
TH58BVG2S3HTA00_TRAY NAND Flash Memory (Alt: TH58BVG2S3HTA00_TRAY)
TH58BVG2S3HTAIO New and Original
TH58BVG2S3HBAI4-ND New and Original
TH58BVG2S3HTA00-ND New and Original
TH58BVG2S3HTAI0-ND New and Original
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