PartNumber | TH58BYG2S3HBAI4 | TH58BYG3S0HBAI4 | TH58BYG2S3HBAI6 |
Description | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) | NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM) | NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM) |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | NAND Flash | NAND Flash | NAND Flash |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TFBGA-63 | TFBGA-63 | BGA-63 |
Memory Size | 4 Gbit | 8 Gbit | 4 Gbit |
Interface Type | Parallel | Parallel | Parallel |
Organization | 512 M x 8 | 1 G x 8 | 512 M x 8 |
Data Bus Width | 8 bit | 8 bit | 8 bit |
Supply Voltage Min | 1.7 V | 1.7 V | 1.7 V |
Supply Voltage Max | 1.95 V | 1.95 V | 1.95 V |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
Packaging | Tray | Tray | Tray |
Memory Type | NAND | NAND | NAND |
Product | NAND Flash | - | NAND Flash |
Brand | Toshiba Memory | Toshiba Memory | Toshiba Memory |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | NAND Flash | NAND Flash | NAND Flash |
Factory Pack Quantity | 210 | 210 | 338 |
Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
Timing Type | - | Synchronous | - |
Supply Current Max | - | 30 mA | - |