TH58BY

TH58BYG2S3HBAI4 vs TH58BYG3S0HBAI4 vs TH58BYG2S3HBAI6

 
PartNumberTH58BYG2S3HBAI4TH58BYG3S0HBAI4TH58BYG2S3HBAI6
DescriptionNAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
ManufacturerToshibaToshibaToshiba
Product CategoryNAND FlashNAND FlashNAND Flash
RoHSYYY
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTFBGA-63TFBGA-63BGA-63
Memory Size4 Gbit8 Gbit4 Gbit
Interface TypeParallelParallelParallel
Organization512 M x 81 G x 8512 M x 8
Data Bus Width8 bit8 bit8 bit
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Voltage Max1.95 V1.95 V1.95 V
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 85 C+ 85 C+ 85 C
PackagingTrayTrayTray
Memory TypeNANDNANDNAND
ProductNAND Flash-NAND Flash
BrandToshiba MemoryToshiba MemoryToshiba Memory
Moisture SensitiveYesYesYes
Product TypeNAND FlashNAND FlashNAND Flash
Factory Pack Quantity210210338
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Timing Type-Synchronous-
Supply Current Max-30 mA-
Manufacturer Part # Description RFQ
Toshiba Memory
Toshiba Memory
TH58BYG3S0HBAI6 NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
TH58BYG2S3HBAI4 NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
TH58BYG3S0HBAI4 NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
TH58BYG2S3HBAI6 NAND Flash 1.8V 4Gb 24nm SLC NAND (EEPROM)
TH58BYG2S3HBAI6 IC FLASH 4G PARALLEL 67VFBGA Benand
TH58BYG3S0HBAI6 8GB SLC NAND 24NM BGA 6.5X8 1.8V Benand
TH58BYG2S3HBAI4 4G SLC NAND BGA 24NM Benand
TH58BYG3S0HBAI4 8GB SLC BENAND 24NM BGA 9X11 1.8
TH58BYG2S3HBAI4-ND New and Original
TH58BYG2S3HBAI6-ND New and Original
TH58BYG3S0HBAI6-ND New and Original
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