TISP61089ASDR

TISP61089ASDR-S vs TISP61089ASDRS vs TISP61089ASDR

 
PartNumberTISP61089ASDR-STISP61089ASDRSTISP61089ASDR
DescriptionSCRs Dual P Gate Forward ConductingSurge Protection Circuit, PDSO8SCRs Dual P Gate Forward Conducting
ManufacturerBourns--
Product CategorySCRs--
RoHSY--
SeriesTISP61089--
Breakover Current IBO Max11 A--
Rated Repetitive Off State Voltage VDRM120 V--
Off State Leakage Current @ VDRM IDRM5 uA--
On State RMS Current It RMS---
Vf Forward Voltage3 V--
Gate Trigger Voltage Vgt2.5 V--
Gate Trigger Current Igt- 5 uA--
Holding Current Ih Max- 150 mA--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
PackagingReel--
Breakover Voltage VBO- 57 V--
Current Rating5 uA--
Height1.55 mm--
Length5 mm--
TypeDual Forward Conducting P-Gate Thyristors--
Width4 mm--
BrandBourns--
Non Repetitive On State Current11 A--
Product TypeSCRs--
Factory Pack Quantity2500--
SubcategoryThyristors--
TradenameTISP--
Unit Weight0.004762 oz--
Manufacturer Part # Description RFQ
Bourns
Bourns
TISP61089ASDR-S SCRs Dual P Gate Forward Conducting
TISP61089ASDR-S SCRs Dual P Gate Forward Conducting
TISP61089ASDRS Surge Protection Circuit, PDSO8
TISP61089ASDR SCRs Dual P Gate Forward Conducting
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