PartNumber | TK10A60E,S4X | TK10A60D(STA4,Q,M) | TK10A60E,S5X |
Description | MOSFET PLN MOS 600V 750mOhm (VGS=10V) TO-220SIS | MOSFET MOSFET N-ch 600V 10A | MOSFET PLN MOS 600V 750mOhm (VGS=10V) TO-220SIS |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Tradename | DTMOSIV | DTMOSIV | DTMOSIV |
Series | TK10A60E | TK10A60D | TK10A60E |
Brand | Toshiba | Toshiba | Toshiba |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 50 | 2500 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Mounting Style | - | Through Hole | Through Hole |
Package / Case | - | TO-220SIS-3 | TO-220-3 |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 600 V | 600 V |
Id Continuous Drain Current | - | 10 A | 10 A |
Rds On Drain Source Resistance | - | 750 mOhms | 750 mOhms |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 10 V | - |
Qg Gate Charge | - | 25 nC | 40 nC |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 45 W | 45 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | - |
Height | - | 15 mm | 15.1 mm |
Length | - | 10 mm | 10.16 mm |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Type | - | Field Effect Transistor Silicon N Channel MOS Type | - |
Width | - | 4.5 mm | 4.45 mm |
Forward Transconductance Min | - | 1.5 S | - |
Fall Time | - | 15 ns | - |
Rise Time | - | 22 ns | - |
Typical Turn Off Delay Time | - | 100 ns | - |
Typical Turn On Delay Time | - | 55 ns | - |
Unit Weight | - | 0.211644 oz | 0.211644 oz |