 |  | | |
| PartNumber | TK12A60W,S4VX | TK12A60W | TK12A60W S4VX(M |
| Description | MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 11.5 A | - | - |
| Rds On Drain Source Resistance | 300 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.7 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 25 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 35 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 15 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK12A60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 5.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 23 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 85 ns | - | - |
| Typical Turn On Delay Time | 45 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TK12A60W,S4VX | MOSFET N-Ch 600V 11.5A 35W DTMOSIV 890pF 25nC | |
| TK12A60W | New and Original | ||
| TK12A60W S4VX(M | New and Original | ||
| TK12A60WS4VX(M | New and Original | ||
| TK12A60WS4VX-ND | New and Original |