TK13A50

TK13A50D(STA4,Q,M) vs TK13A50D vs TK13A50D(Q)

 
PartNumberTK13A50D(STA4,Q,M)TK13A50DTK13A50D(Q)
DescriptionMOSFET N-Ch MOS 13A 500V 45W 1800pF 0.40Trans MOSFET N-CH Si 500V 13A 3-Pin(3+Tab) TO-220SIS
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220FP-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance400 mOhms--
Pd Power Dissipation45 W--
ConfigurationSingle--
Height15 mm--
Length10 mm--
SeriesTK13A50D--
Transistor Type1 N-Channel--
Width4.5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TK13A50DA(STA4,Q,M MOSFET N-Ch MOS 13A 500V 45W 1550pF 0.47
TK13A50D(STA4,Q,M) MOSFET N-Ch MOS 13A 500V 45W 1800pF 0.40
TK13A50DA(STA4,Q,M IGBT Transistors MOSFET N-Ch MOS 13A 500V 45W 1550pF 0.47
TK13A50D(STA4,Q,M) MOSFET N-Ch MOS 13A 500V 45W 1800pF 0.40
TK13A50D New and Original
TK13A50D(STA4,X,S) New and Original
TK13A50D(STA4Q) New and Original
TK13A50DA New and Original
TK13A50DA TK13A50D New and Original
TK13A50DA(STA4QM New and Original
TK13A50DQ Power Field-Effect Transistor, 12.5A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
TK13A50D(STA4QM) MOSFET N-CH 500V TO220SIS
TK13A50D(Q) Trans MOSFET N-CH Si 500V 13A 3-Pin(3+Tab) TO-220SIS
TK13A50D(STA4QM)-ND New and Original
TK13A50DA(STA4QM-ND New and Original
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