TK160F

TK160F10N1L,LQ vs TK160F10N1 vs TK160F10N1L

 
PartNumberTK160F10N1L,LQTK160F10N1TK160F10N1L
DescriptionMOSFET U-MOSVIII-H 100V 160A 122nC MOSFET
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-220SMW-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current160 A--
Rds On Drain Source Resistance2 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge122 nC--
Minimum Operating Temperature---
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation375 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
SeriesTK160F10N1L--
Transistor Type1 N-Channel--
BrandToshiba--
Fall Time40 ns--
Product TypeMOSFET--
Rise Time22 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time140 ns--
Typical Turn On Delay Time42 ns--
Unit Weight0.063493 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TK160F10N1L,LQ MOSFET U-MOSVIII-H 100V 160A 122nC MOSFET
TK160F10N1 New and Original
TK160F10N1L New and Original
TK160F10N1LLQTSB New and Original
TK160F10N1LQ(O New and Original
TK160F10N1LLQ-ND New and Original
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