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| PartNumber | TK16E60W5,S1VX | TK16E60W5 | TK16E60W5S1VX-ND |
| Description | MOSFET Power MOSFET N-Channel | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 15.8 A | - | - |
| Rds On Drain Source Resistance | 180 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 43 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 130 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 15.1 mm | - | - |
| Length | 10.16 mm | - | - |
| Series | TK16E60W5 | - | - |
| Width | 4.45 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 40 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 100 ns | - | - |
| Typical Turn On Delay Time | 75 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TK16E60W5,S1VX | MOSFET Power MOSFET N-Channel | |
| TK16E60W5 | New and Original | ||
| TK16E60W5S1VX-ND | New and Original |