 |  | | |
| PartNumber | TK20N60W,S1VF | TK20N60W,S1EMRF(S | TK20N60W,S1VF(S |
| Description | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-247-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 20 A | - | - |
| Rds On Drain Source Resistance | 130 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.7 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 48 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 165 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Height | 20.95 mm | - | - |
| Length | 15.94 mm | - | - |
| Series | TK20N60W | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.02 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 25 ns | - | - |
| Factory Pack Quantity | 30 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 100 ns | - | - |
| Typical Turn On Delay Time | 50 ns | - | - |
| Unit Weight | 1.340411 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TK20N60W,S1VF | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | |
| TK20N60W,S1VF | Darlington Transistors MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | ||
| TK20N60W,S1EMRF(S | New and Original | ||
| TK20N60W,S1VF(S | New and Original |