TK34A10N1,S

TK34A10N1,S4X vs TK34A10N1,S4X(S

 
PartNumberTK34A10N1,S4XTK34A10N1,S4X(S
DescriptionMOSFET MOSFET NCh 8 mOhms VGS10V10uAVDS100VMOSFET U-MOS8 100V/34A TO220, PK
ManufacturerToshiba-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleThrough Hole-
Package / CaseTO-220FP-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage100 V-
Id Continuous Drain Current34 A-
Rds On Drain Source Resistance7.9 mOhms-
Vgs th Gate Source Threshold Voltage4 V-
Vgs Gate Source Voltage20 V-
Qg Gate Charge38 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation35 W-
ConfigurationSingle-
Channel ModeEnhancement-
Height15 mm-
Length10 mm-
SeriesTK34A10N1-
Transistor Type1 N-Channel-
Width4.5 mm-
BrandToshiba-
Product TypeMOSFET-
Factory Pack Quantity50-
SubcategoryMOSFETs-
Unit Weight0.211644 oz-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TK34A10N1,S4X MOSFET MOSFET NCh 8 mOhms VGS10V10uAVDS100V
TK34A10N1,S4X MOSFET MOSFET NCh 8 mOhms VGS10V10uAVDS100V
TK34A10N1,S4X(S MOSFET U-MOS8 100V/34A TO220, PK
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