PartNumber | TK39N60X,S1F | TK39N60X,S1F(S | TK39N60X |
Description | MOSFET DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) | MOSFET N-CHANNEL 600V 38.8A TO247, EA | |
Manufacturer | Toshiba | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-247-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 600 V | - | - |
Id Continuous Drain Current | 38.8 A | - | - |
Rds On Drain Source Resistance | 55 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3.5 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 85 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 270 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | DTMOSIV | - | - |
Height | 20.95 mm | - | - |
Length | 15.94 mm | - | - |
Series | TK39N60X | - | - |
Transistor Type | 1 N-Channel | - | - |
Width | 5.02 mm | - | - |
Brand | Toshiba | - | - |
Forward Transconductance Min | - | - | - |
Fall Time | 6 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 35 ns | - | - |
Factory Pack Quantity | 30 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 155 ns | - | - |
Typical Turn On Delay Time | 60 ns | - | - |
Unit Weight | 1.340411 oz | - | - |