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| PartNumber | TK5A50D(STA4,Q,M) | TK5A50D(STA4,Q) | TK5A50D(STA4,Q,M)-ND |
| Description | MOSFET MOSFET N-CH 500V, 5A | IGBT Transistors MOSFET N-Ch 500V 5A 1.5Ohm 10uA FET | |
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 500 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 1.5 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.4 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 11 nC | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 35 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Height | 15 mm | - | - |
| Length | 10 mm | - | - |
| Series | TK5A50D | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 4.5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 18 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 55 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TK5A50D(STA4,Q,M) | MOSFET MOSFET N-CH 500V, 5A | |
| TK5A50D(STA4,Q,M) | Darlington Transistors MOSFET MOSFET N-CH 500V, 5A | ||
| TK5A50D(STA4,Q) | IGBT Transistors MOSFET N-Ch 500V 5A 1.5Ohm 10uA FET | ||
| TK5A50D(STA4,Q,M)-ND | New and Original |