 |  | | |
| PartNumber | TK8Q65W,S1Q | TK8Q65W | TK8Q65WS1Q |
| Description | MOSFET Power MOSFET N-Channel | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-251-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 650 V | - | - |
| Id Continuous Drain Current | 7.8 A | - | - |
| Rds On Drain Source Resistance | 550 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 16 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 80 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Packaging | Tube | - | - |
| Height | 6.1 mm | - | - |
| Length | 6.65 mm | - | - |
| Series | TK8Q65W | - | - |
| Width | 2.3 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 20 ns | - | - |
| Factory Pack Quantity | 75 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 60 ns | - | - |
| Typical Turn On Delay Time | 40 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TK8Q65W,S1Q | MOSFET Power MOSFET N-Channel | |
| TK8Q65W | New and Original | ||
| TK8Q65WS1Q | New and Original | ||
| TK8Q65WS1Q-ND | New and Original |