TN0106

TN0106N3-G vs TN0106N3-G P002 vs TN0106N3-G P005

 
PartNumberTN0106N3-GTN0106N3-G P002TN0106N3-G P005
DescriptionMOSFET 60V 3OhmMOSFET N-CH Enhancmnt Mode MOSFETMOSFET N-CH Enhancmnt Mode MOSFET
ManufacturerMicrochipMicrochipMicrochip
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-92-3TO-92-3TO-92-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current350 mA350 mA350 mA
Rds On Drain Source Resistance3 Ohms4.5 Ohms4.5 Ohms
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage10 V20 V-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1 W1 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingBulkReelReel
Height5.33 mm--
Length5.21 mm--
Transistor Type1 N-Channel1 N-Channel1 N-Channel
TypeFET--
Width4.19 mm--
BrandMicrochip TechnologyMicrochip TechnologyMicrochip Technology
Forward Transconductance Min225 mS--
Fall Time3 ns3 ns-
Product TypeMOSFETMOSFETMOSFET
Rise Time3 ns3 ns-
Factory Pack Quantity100020002000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time6 ns6 ns-
Typical Turn On Delay Time2 ns2 ns-
Unit Weight0.016000 oz0.016000 oz0.016000 oz
Product-MOSFET Small Signal-
Manufacturer Part # Description RFQ
Microchip Technology
Microchip Technology
TN0106N3-G-P003 MOSFET N-Channel DMOS FET Low Threshold 2.0V
TN0106N3-G MOSFET 60V 3Ohm
TN0106N3-G-P013 MOSFET N-CH Enhancmnt Mode MOSFET
TN0106N3-G P002 MOSFET N-CH Enhancmnt Mode MOSFET
TN0106N3-G P005 MOSFET N-CH Enhancmnt Mode MOSFET
TN0106 New and Original
TN0106N3 MOSFET 60V 3Ohm
TN0106N3-G MOSFET N-CH 60V 350MA TO92-3
TN0106N3-G-P013 MOSFET N-CH 60V 350MA TO92-3
TN0106N3-G-P003 Trans MOSFET N-CH 60V 0.35A 3-Pin TO-92 T/R
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