TP0604N3

TP0604N3-G vs TP0604N3-G P002 vs TP0604N3

 
PartNumberTP0604N3-GTP0604N3-G P002TP0604N3
DescriptionMOSFET 40V 2 OhmRF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFETMOSFET 40V 2Ohm
ManufacturerMicrochipMicrochip TechnologySUPERTEX
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleFETs - Single
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current430 mA--
Rds On Drain Source Resistance2 Ohms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation0.74 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingBulkReel-
Height5.33 mm--
Length5.21 mm--
Transistor Type1 P-Channel1 P-Channel-
Width4.19 mm--
BrandMicrochip Technology--
Forward Transconductance Min400 mS--
Fall Time6 ns6 ns-
Product TypeMOSFET--
Rise Time7 ns7 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time10 ns10 ns-
Typical Turn On Delay Time5 ns5 ns-
Unit Weight0.016000 oz0.016000 oz-
Package Case-TO-92-3-
Pd Power Dissipation-1 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-- 430 mA-
Vds Drain Source Breakdown Voltage-- 40 V-
Rds On Drain Source Resistance-3.5 Ohms-
Manufacturer Part # Description RFQ
Microchip Technology
Microchip Technology
TP0604N3-G MOSFET 40V 2 Ohm
TP0604N3-G P005 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0604N3-G P013 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0604N3-G P003 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0604N3-G P014 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0604N3-G P002 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP0604N3 MOSFET 40V 2Ohm
TP0604N3-G MOSFET P-CH 40V 430MA TO92-3
TP0604N3G New and Original
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