TP2535N

TP2535N3-G vs TP2535N3-G P002 vs TP2535N3

 
PartNumberTP2535N3-GTP2535N3-G P002TP2535N3
DescriptionMOSFET 350V 25OhmRF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFETMOSFET 350V 25Ohm
ManufacturerMicrochipMicrochip Technology-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage350 V--
Id Continuous Drain Current86 mA--
Rds On Drain Source Resistance25 Ohms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation740 mW--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingBulkReel-
Height5.33 mm--
Length5.21 mm--
ProductMOSFET Small Signal--
Transistor Type1 P-Channel1 P-Channel-
TypeFET--
Width4.19 mm--
BrandMicrochip Technology--
Fall Time10 ns13 ns-
Product TypeMOSFET--
Rise Time10 ns10 ns-
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns20 ns-
Typical Turn On Delay Time10 ns10 ns-
Unit Weight0.016000 oz0.016000 oz-
Package Case-TO-92-3-
Pd Power Dissipation-740 mW-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-- 86 mA-
Vds Drain Source Breakdown Voltage-- 350 V-
Rds On Drain Source Resistance-30 Ohms-
Manufacturer Part # Description RFQ
Microchip Technology
Microchip Technology
TP2535N3-G MOSFET 350V 25Ohm
TP2535N3-G P003 MOSFET P-CH Enhancmnt Mode MOSFET
TP2535N3-G P014 MOSFET P-CH Enhancmnt Mode MOSFET
TP2535N3-G P002 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP2535N3-G P005 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP2535N3-G P014 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP2535N3-G P013 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP2535N3-G P003 RF Bipolar Transistors MOSFET P-CH Enhancmnt Mode MOSFET
TP2535N3 MOSFET 350V 25Ohm
TP2535N3-G MOSFET P-CH 350V 0.086A TO92-3
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