TP532

TP5322K1-G vs TP5322K1 vs TP5322N8

 
PartNumberTP5322K1-GTP5322K1TP5322N8
DescriptionMOSFET 220V 12 Ohm 0.7AMOSFET MOSFET PCh ENHANCE MODE -220V 12MOSFET MOSFET PCh ENHANCE MODE -220V 12
ManufacturerMicrochip-
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-23-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage220 V--
Id Continuous Drain Current120 mA--
Rds On Drain Source Resistance12 Ohms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation360 mW--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingReel-Reel
Height0.95 mm--
Length2.9 mm--
ProductMOSFET Small Signal--
Transistor Type1 P-Channel-1 P-Channel
Width1.3 mm--
BrandMicrochip Technology--
Forward Transconductance Min100 mS--
Fall Time15 ns-15 ns
Product TypeMOSFET--
Rise Time15 ns-15 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns-20 ns
Typical Turn On Delay Time10 ns-10 ns
Unit Weight0.000282 oz-0.001862 oz
Package Case--SOT-89-3
Pd Power Dissipation--1.6 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--- 260 mA
Vds Drain Source Breakdown Voltage--- 220 V
Rds On Drain Source Resistance--12 Ohms
Manufacturer Part # Description RFQ
Microchip Technology
Microchip Technology
TP5322K1-G MOSFET 220V 12 Ohm 0.7A
TP5322N8-G MOSFET 220V 12 Ohm 0.7A
TP5322K1 MOSFET MOSFET PCh ENHANCE MODE -220V 12
TP5322K1-G MOSFET P-CH 220V 0.12A SOT23-3
TP5322N8 MOSFET MOSFET PCh ENHANCE MODE -220V 12
TP5322N8-G MOSFET P-CH 220V 0.26A SOT89-3
TP5323N8 New and Original
TP5325N8-G New and Original
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