| PartNumber | TPH11006NL,LQ | TPH11003NL,LQ | TPH1110ENH,L1Q |
| Description | MOSFET U-MOSVIII-H 60V 40A 23nC MOSFET | MOSFET N-Ch DTMOS VII-H 21W 510pF 32A 30V | MOSFET UMOSVIII 200V 131m (VGS=10V) SOP-ADV |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOP-Advance-8 | SOP-Advance-8 | SOP-Advance-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 30 V | 200 V |
| Id Continuous Drain Current | 40 A | 32 A | 13 A |
| Rds On Drain Source Resistance | 17 mOhms | 12.6 mOhms | 96 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.3 V | 4 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 23 nC | 7.5 nC | 7 nC |
| Pd Power Dissipation | 34 W | 21 W | 42 W |
| Configuration | Single | Single | Triple |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 0.95 mm | 0.95 mm | 0.95 mm |
| Length | 5 mm | 5 mm | 5 mm |
| Series | TPH11006NL | TPH11003NL | TPH1110ENH |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5 mm | 5 mm | 5 mm |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 7.1 ns | 1.9 ns | 4.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 4 ns | 2.1 ns | 5.2 ns |
| Factory Pack Quantity | 3000 | 3000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 27 ns | 13.5 ns | 19 ns |
| Typical Turn On Delay Time | 11 ns | 7.5 ns | 14 ns |
| Part # Aliases | TPH11006NL,LQ(S | - | - |
| Unit Weight | 0.030018 oz | 0.030018 oz | 0.030018 oz |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |