TPH2R5

TPH2R506PL,L1Q vs TPH2R506PL vs TPH2R506PLL1HQ(M

 
PartNumberTPH2R506PL,L1QTPH2R506PLTPH2R506PLL1HQ(M
DescriptionMOSFET N-Ch 60V 4180pF 60nC 160A 132W
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current160 A--
Rds On Drain Source Resistance1.9 mOhms--
Vgs th Gate Source Threshold Voltage1.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge60 nC--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation132 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.95 mm--
Length5 mm--
Transistor Type1 N-Channel--
Width5 mm--
BrandToshiba--
Fall Time13 ns--
Product TypeMOSFET--
Rise Time7.1 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time39 ns--
Typical Turn On Delay Time16 ns--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TPH2R506PL,L1Q MOSFET N-Ch 60V 4180pF 60nC 160A 132W
TPH2R506PL New and Original
TPH2R506PLL1HQ(M New and Original
TPH2R506PLL1QCT-ND New and Original
TPH2R506PLL1QDKR-ND New and Original
TPH2R506PLL1QTR-ND New and Original
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