TPHR9003NL

TPHR9003NL,L1Q vs TPHR9003NL vs TPHR9003NL L1Q(M

 
PartNumberTPHR9003NL,L1QTPHR9003NLTPHR9003NL L1Q(M
DescriptionMOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30VTransistor: N-MOSFET, unipolar, 30V, 60A, 78W, SOP8A
ManufacturerToshibaTOSHIBA-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOP-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current60 A--
Rds On Drain Source Resistance1.1 mOhms--
Vgs th Gate Source Threshold Voltage2.3 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge74 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation78 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
Height0.95 mm--
Length5 mm--
SeriesTPHR9003NL--
Transistor Type1 N-Channel--
Width5 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Unit Weight0.030018 oz--
Package Case-8-PowerVDFN-
Operating Temperature-150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SOP Advance-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-78W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-6900pF @ 15V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-60A (Tc)-
Rds On Max Id Vgs-0.9 mOhm @ 30A, 10V-
Vgs th Max Id-2.3V @ 1mA-
Gate Charge Qg Vgs-74nC @ 10V-
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TPHR9003NL,L1Q MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V
TPHR9003NLL1QCT-ND New and Original
TPHR9003NLL1QDKR-ND New and Original
TPHR9003NLL1QTR-ND New and Original
TPHR9003NL,L1Q MOSFET X35PBF Power MOSFET Trans VGS4.5VVDS30V
TPHR9003NL Transistor: N-MOSFET, unipolar, 30V, 60A, 78W, SOP8A
TPHR9003NL L1Q(M New and Original
TPHR9003NLL1Q MOSFET POWER MOSFET TRANSISTOR
TPHR9003NLL1Q(M New and Original
TPHR9003NL.L1QM New and Original
TPHR9003NL.L1Q Trans MOSFET N-CH 30V 220A 8-Pin SOP - Tape and Reel (Alt: TPHR9003NL,L1Q)
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