PartNumber | TPN11006NL,LQ | TPN11006PL,LQ | TPN1110ENH,L1Q |
Description | MOSFET U-MOSVIII-H 60V 37A 23nC MOSFET | MOSFET X35 Pb-F POWER MOSFET TRANSISTOR TSON-ADV PD=61W F=1MHZ | MOSFET UMOSVIII 200V 126m (VGS=10V) TSON-ADV |
Manufacturer | Toshiba | Toshiba | Toshiba |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSON-Advance-8 | TSON-8 | TSON-Advance-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 200 V |
Id Continuous Drain Current | 37 A | 54 A | 13 A |
Rds On Drain Source Resistance | 17 mOhms | 11.4 mOhms | 96 mOhms |
Vgs th Gate Source Threshold Voltage | 2.5 V | 1.5 V | 4 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 23 nC | 17 nC | 7 nC |
Pd Power Dissipation | 30 W | 61 W | 39 W |
Configuration | Single | Single | Triple |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 0.85 mm | - | 0.85 mm |
Length | 3.1 mm | - | 3.1 mm |
Series | TPN11006NL | TPN11006PL | TPN1110ENH |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 3.1 mm | - | 3.1 mm |
Brand | Toshiba | Toshiba | Toshiba |
Fall Time | 7.1 ns | 3.8 ns | 4.5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 4 ns | 2.7 ns | 5.2 ns |
Factory Pack Quantity | 3000 | 3000 | 5000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 27 ns | 23 ns | 19 ns |
Typical Turn On Delay Time | 11 ns | 16 ns | 14 ns |
Unit Weight | 0.000705 oz | - | - |
Maximum Operating Temperature | - | + 175 C | + 150 C |
Minimum Operating Temperature | - | - | - 55 C |