TPN11006NL

TPN11006NL,LQ vs TPN11006NL vs TPN11006NL LQ(S

 
PartNumberTPN11006NL,LQTPN11006NLTPN11006NL LQ(S
DescriptionMOSFET U-MOSVIII-H 60V 37A 23nC MOSFET
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSON-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current37 A--
Rds On Drain Source Resistance17 mOhms--
Vgs th Gate Source Threshold Voltage2.5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge23 nC--
Pd Power Dissipation30 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.85 mm--
Length3.1 mm--
SeriesTPN11006NL--
Transistor Type1 N-Channel--
Width3.1 mm--
BrandToshiba--
Fall Time7.1 ns--
Product TypeMOSFET--
Rise Time4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time11 ns--
Unit Weight0.000705 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TPN11006NL,LQ MOSFET U-MOSVIII-H 60V 37A 23nC MOSFET
TPN11006NLLQCT-ND New and Original
TPN11006NLLQDKR-ND New and Original
TPN11006NLLQTR-ND New and Original
TPN11006NL New and Original
TPN11006NL LQ(S New and Original
TPN11006NL,LQ MOSFETs Silicon N-channel MOS
TPN11006NLLQ MOSFET POWER MOSFET TRANSISTOR
TPN11006NLLQ(S New and Original
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