 |  | | |
| PartNumber | TPN1110ENH,L1Q | TPN1110ENH | TPN1110ENH,L1Q(M |
| Description | MOSFET UMOSVIII 200V 126m (VGS=10V) TSON-ADV | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TSON-Advance-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 13 A | - | - |
| Rds On Drain Source Resistance | 96 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 39 W | - | - |
| Configuration | Triple | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.85 mm | - | - |
| Length | 3.1 mm | - | - |
| Series | TPN1110ENH | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 3.1 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 4.5 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 5.2 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 19 ns | - | - |
| Typical Turn On Delay Time | 14 ns | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Toshiba |
TPN1110ENH,L1Q | MOSFET UMOSVIII 200V 126m (VGS=10V) TSON-ADV | |
| TPN1110ENHL1QCT-ND | New and Original | ||
| TPN1110ENHL1QDKR-ND | New and Original | ||
| TPN1110ENHL1QTR-ND | New and Original | ||
| TPN1110ENH,L1Q | MOSFET UMOSVIII 200V 126m (VGS=10V) TSON-ADV | ||
| TPN1110ENH | New and Original | ||
| TPN1110ENH,L1Q(M | New and Original | ||
| TPN1110ENHL1Q | MOSFET POWER MOSFET TRANSISTOR | ||
| TPN1110ENHL1Q(M | New and Original |