TPN300

TPN30008NH,LQ vs TPN30008NH vs TPN30008NH,LQ(S

 
PartNumberTPN30008NH,LQTPN30008NHTPN30008NH,LQ(S
DescriptionMOSFET N-Ch 80V 22A 27W UMOSVIII 710pF 11nC
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSON-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current22 A--
Rds On Drain Source Resistance25 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge11 nC--
Pd Power Dissipation27 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.85 mm--
Length3.1 mm--
SeriesTPN30008NH--
Transistor Type1 N-Channel--
Width3.1 mm--
BrandToshiba--
Fall Time3.6 ns--
Product TypeMOSFET--
Rise Time3.8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns--
Typical Turn On Delay Time11 ns--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TPN30008NH,LQ MOSFET N-Ch 80V 22A 27W UMOSVIII 710pF 11nC
TPN30008NHLQCT-ND New and Original
TPN30008NHLQDKR-ND New and Original
TPN30008NHLQTR-ND New and Original
TPN30008NH,LQ IGBT Transistors MOSFET N-Ch 80V 22A 27W UMOSVIII 710pF 11nC
TPN30008NHLQ MOSFET N-CH 80V 22A 27W UMOSVIII
TPN30008NH New and Original
TPN30008NH,LQ(S New and Original
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