TPN3300ANH,L

TPN3300ANH,LQ vs TPN3300ANH,LQ(S vs TPN3300ANH,LQ(STOSHIBA-C

 
PartNumberTPN3300ANH,LQTPN3300ANH,LQ(STPN3300ANH,LQ(STOSHIBA-C
DescriptionMOSFET N-Ch 100V 21A 27W UMOSVIII 680pF 11nCTrans MOSFET N-CH 100V 21A 8-Pin TSON EP
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTSON-Advance-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current21 A--
Rds On Drain Source Resistance28 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge11 nC--
Pd Power Dissipation27 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.85 mm--
Length3.1 mm--
SeriesTPN3300ANH--
Transistor Type1 N-Channel--
Width3.1 mm--
BrandToshiba--
Fall Time3.8 ns--
Product TypeMOSFET--
Rise Time4.4 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time12 ns--
Unit Weight0.000705 oz--
Manufacturer Part # Description RFQ
Toshiba
Toshiba
TPN3300ANH,LQ MOSFET N-Ch 100V 21A 27W UMOSVIII 680pF 11nC
TPN3300ANH,LQ MOSFET N-CH 100V 9.4A 8TSON
TPN3300ANH,LQ(S Trans MOSFET N-CH 100V 21A 8-Pin TSON EP
TPN3300ANH,LQ(STOSHIBA-C New and Original
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